? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c20a e ar t c = 25 c45mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. to-264 0.9/6 nm/lb.in. weight to-247 6 g to-268 4 g to-264 10 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z international standard packages z epoxy meet ul 94 v-0, flammability classification z low r ds (on) low q g z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.42 ? pulse test, t 300 s, duty cycle d 2 % g = gate s = source tab = drain ds98616a(12/02) to-247 ad (ixfh) (tab) to-268 (d3) ( ixft) g s to-264 aa (ixfk) s g d d (tab) ixfh20n80q IXFK20N80Q ixft20n80q v dss = 800 v i d25 = 20 a r ds(on) = 0.42 ? ? ? ? ? t rr 250 ns preliminary data
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 11 19 s c iss 5100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 500 pf c rss 170 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 27 ns t d(off) r g = 1.5 ? (external), 74 n s t f 14 ns q g(on) 150 200 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 34 nc q gd 80 nc r thjc 0.35 k/w r thck to-247 0.25 k/w to-264 0.15 k/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline to-268 outline source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 20 a i sm repetitive; pulse width limited by t jm 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 9 a i f = i s -di/dt = 100 a/ s, v r = 100 v ixfh20n80q IXFK20N80Q ixft20n80q to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
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